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| Material |
Melting Point |
Limit of Application |
Hardness Moh's Scale |
Density |
Specific
Heat
(mean)
25-1000 °C |
Linear
Coefficient of expansion |
Thermal Conductivity |
Electrical Resistivity |
| UNITS |
°C |
°C |
|
g/cm3 |
J/kg °C |
25-800 °C x
10-6 / °C |
@ °C
W/m °C |
@°C
ohm/cm |
Alumina
(Al203) |
2050 |
1950 |
9 |
3.96 |
1050 |
8.0 |
4@1315 |
106@1100 |
Beryllia
(Be0) |
2550 |
2400 |
9 |
3.0 |
2180 |
7.5 |
29@1000 |
4 x 108@600
8 x 1012@2100 |
Magnesia
(Mg0) |
2850 |
2400 |
6 |
3.60 |
1170 |
13.5 |
59@1100 |
2 x 108@850 |
Thoria
(Th02) |
3220
approx |
2700 |
7 |
9.5 - 9.9 |
290 |
9.5 |
3@1000 |
2.6 x 107@550
1.5 x 104@1200 |
Zirconia
(Zr02) |
2700 |
2400 |
6.5 |
5.5 - 5.8 |
590 |
7.5 |
3@1315 |
106@385
3.6 x 104@1200 |
Zircon
(Zr02Si02) |
2500
approx |
1870 |
7.5 |
4.5 - 4.7 |
630 |
4.5 |
4@1200 |
High |
Spinel
(Mg0 Al203) |
2130 |
1900 |
8 |
3.60 |
1050 |
8.5 |
2@1315 |
2.8 x 107@500
2.0 x 105@110 |
Mullite
(3Al2032Si02) |
1850 |
1800 |
--- |
2.8 |
840 |
5.0 |
4@1200 |
105 - 103
@815-1370 |
Sillimanite
(Al203Si02) |
1800
approx |
1800 |
6.5 |
3.2 |
840 |
5.0 |
2@1300 |
104 - 105
@815 - 1370 |
| Silicon Carbide (SiC) |
2200-2700
Decomposes |
1400-1700
Oxidizes |
9 |
3.2 |
840 |
4.5 |
13@1100 |
7420 -745
@1000 - 1500 |
| Silicon Nitride (Si3N4) |
1900
Sublimes |
1400 in air
1850 in inert |
9 |
3.18 |
1050 |
α = 2.9
β = 2.3 |
9.5@1200 |
1013@25
1010@480 |
| Carbon Graphite (C) varies |
3600
Sublimes |
--- |
0.5 - 1.0 |
2.2 |
1600 |
2.2 |
147@50
63@900 |
10-3 |
Quartizite
(Si02) |
1400 |
1090 |
7 |
2.65 |
1170 |
8.6 |
2.60@1200 |
1014@20
5 x 103@1300 |
Boron Carbide
(B4C) |
2350 |
540 in air
2260 in inert |
9.3 |
2.5 |
2090 |
5.7 |
17.3@800 |
--- |
Baron Nitride
(BN) |
2721 |
650
Oxidizes |
2 |
2.1 |
1570 |
7.5 //
0.77┴ |
26@900 |
1.7 x 1013@25//
2.3 x 1010@480// |
TitaniumCarbide
(TiC) |
3140 |
1500
Oxidizes |
9 - 10 |
6.5 |
1050 |
6.9 |
40@1100 |
--- |
| TungstenCarbide |
2780 |
--- |
9 - 10 |
14.3 |
300 |
6.3 |
43.3@1100 |
--- |
